Electrical nucleation and detection of single 360° homochiral Néel domain walls measured using the anomalous Nernst effect

Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.

Magnetic skyrmions are topologically stable spin configurations, which usually originate from chiral interactions known as Dzyaloshinskii-Moriya interactions. Skyrmion lattices were initially observed in bulk non-centrosymmetric crystals, but have more recently been noted in ultrathin films, where their existence is explained by interfacial Dzyaloshinskii-Moriya interactions induced by the proximity to an adjacent layer with strong spin-orbit coupling. Skyrmions are promising candidates as information carriers for future information-processing devices due to their small size (down to a few nanometres) and to the very small current densities needed to displace skyrmion lattices. However, any practical application will probably require the creation, manipulation and detection of isolated skyrmions in magnetic thin-film nanostructures. Here, we demonstrate by numerical investigations that an isolated skyrmion can be a stable configuration in a nanostructure, can be locally nucleated by injection of spin-polarized current, and can be displaced by current-induced spin torques, even in the presence of large defects.