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Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO2 layers
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Lasing in direct-bandgap GeSn alloy grown on Si
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Deformation Potentials ofk = 0 States of Tetrahedral Semiconductors
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Optical critical points of thin-film\({\mathrm{Ge}}_{1-y}{\mathrm{Sn}}_{y}\)alloys: A comparative\({\mathrm{Ge}}_{1-y}{\mathrm{Sn}}_{y}∕{\mathrm{Ge}}_{1-x}{\mathrm{Si}}_{x}\)study
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