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2,091
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Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO2 layers
Author(s):
Xiaoxin Wang
1
,
Jifeng Liu
1
Publication date
Created:
March 07 2016
Publication date
(Print):
March 07 2016
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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HR-EBSD (High Resolution - Electron Back Scatter Diffraction)
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Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths
,
R. Geiger
,
N. von den Driesch
…
(2015)
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Deformation Potentials ofk = 0 States of Tetrahedral Semiconductors
A. Blacha
,
H. Presting
,
M. Cardona
(1984)
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Optical critical points of thin-film\({\mathrm{Ge}}_{1-y}{\mathrm{Sn}}_{y}\)alloys: A comparative\({\mathrm{Ge}}_{1-y}{\mathrm{Sn}}_{y}∕{\mathrm{Ge}}_{1-x}{\mathrm{Si}}_{x}\)study
John Kouvetakis
,
Stefan Zöllner
,
A. Birdwell
…
(2006)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
March 07 2016
Publication date (Print):
March 07 2016
Volume
: 108
Issue
: 10
Page
: 102101
Affiliations
[
1
]
Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755, USA
Article
DOI:
10.1063/1.4943192
SO-VID:
d84bcda8-8ecd-4986-abb6-5a249f3fc190
Copyright ©
© 2016
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https://publishing.aip.org/authors/rights-and-permissions
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