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      Hole drift velocity in silicon

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          Valence-Band Parameters in Cubic Semiconductors

          P. Lawaetz (1971)
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            Electrical Properties of Silicon Containing Arsenic and Boron

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              Monte Carlo determination of electron transport properties in gallium arsenide

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0556-2805
                October 1975
                October 1975
                : 12
                : 8
                : 3318-3329
                Article
                10.1103/PhysRevB.12.3318
                d9124b33-6272-458e-89e3-e26a682b95b3
                © 1975

                http://link.aps.org/licenses/aps-default-license

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