Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

Berger, P.R.; Thompson, P.E.; Hobart, K.D.; Lake, R.; Seabaugh, A.C.; Rommel, S.L.; Dillon, T.E.; Seabaugh, Alan

doi:10.1109/55.772366

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Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

Author(s): S.L. Rommel , T.E. Dillon , P.R. Berger , P.E. Thompson , K.D. Hobart , R. Lake , A.C. Seabaugh

Publication date (Print): July 1999

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 11

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Direct Observation of Phonons During Tunneling in Narrow Junction Diodes

N. Holonyak, J Tiemann, R. Hall … (1959)

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Electron resonant tunneling in Si/SiGe double barrier diodes

B. S. Meyerson, P Wang, K Ismail (1991)

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Effects of strain on boron diffusion in Si and Si1−xGex

J. Hoyt, D. Lefforge, J E Turner … (1995)

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Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

ISSN (Electronic): 1558-0563

Publication date Created: July 1999

Publication date (Print): July 1999

Volume: 20

Issue: 7

Pages: 329-331

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DOI: 10.1109/55.772366

SO-VID: d9a7129b-0ead-42bf-8d6c-d095cc64cc23

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Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

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Most cited references 11

Direct Observation of Phonons During Tunneling in Narrow Junction Diodes

Electron resonant tunneling in Si/SiGe double barrier diodes

Effects of strain on boron diffusion in Si and Si1−xGex

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