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      Growth of GexSi1−xalloys on Si(110) surfaces

      Author(s): , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

          J. C. Bean, L Feldman, A. Fiory … (1984)
          Article 0 comments Cited 222 times – based on 0 reviews     Review now
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            Defects in epitaxial multilayers

            A.E. Blakeslee, J.W. Matthews (1976)
            Article 0 comments Cited 161 times – based on 0 reviews     Review now
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              Relaxation of strained‐layer semiconductor structures via plastic flow

              Brian Dodson, Jeffrey Y. Tsao (1987)
              Article 0 comments Cited 161 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: August 19 1991
                Publication date (Print): August 19 1991
                Volume: 59
                Issue: 8
                Pages: 964-966
                Article
                DOI: 10.1063/1.106316
                SO-VID: d9d136a5-86c5-491f-9991-3bc7a87f6bfd
                Copyright © © 1991
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