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      Growth of GexSi1−xalloys on Si(110) surfaces

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      Applied Physics Letters

      AIP Publishing

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          GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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            Defects in epitaxial multilayers

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              Relaxation of strained‐layer semiconductor structures via plastic flow

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                August 19 1991
                August 19 1991
                : 59
                : 8
                : 964-966
                Article
                10.1063/1.106316
                © 1991
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