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      Migration of implanted indium in silicon as a function of thermal annealing

      Author(s): , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Reordering of amorphous layers of Si implanted with31P,75As, and11B ions

          L Csepregi, E. F. Kennedy, T J Gallagher … (1977)
          Article 0 comments Cited 124 times – based on 0 reviews     Review now
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            Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers

            E. F. Kennedy, L Csepregi, J. Mayer … (1977)
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              Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon

              T. W. Sigmon, L Csepregi, J. Mayer (1976)
              Article 0 comments Cited 89 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: April 1983
                Publication date (Print): April 1983
                Volume: 42
                Issue: 7
                Pages: 575-577
                Article
                DOI: 10.1063/1.94006
                SO-VID: d9d23500-48d4-441b-9d5b-991d40cd0442
                Copyright © © 1983
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