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      Anisotropy in breakdown field of 4H–SiC

      Author(s): , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes3C,4H,6H,15R, and21R

          Lyle Patrick, D. Feldman, W. Choyke … (1968)
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            Step-controlled epitaxial growth of SiC: High quality homoepitaxy

            Hiroyuki Matsunami, Tsunenobu Kimoto (1997)
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              Time evolution of Bloch electrons in a homogeneous electric field

              J. B. Krieger, G. J. Iafrate (1986)
              Article 0 comments Cited 87 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: May 06 2002
                Publication date (Print): May 06 2002
                Volume: 80
                Issue: 18
                Pages: 3355-3357
                Article
                DOI: 10.1063/1.1477271
                SO-VID: d9d918f9-af72-4cab-ba63-a5a8ce70b5dc
                Copyright © © 2002
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