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      Polarized hard X-ray photoemission system with micro-positioning technique for probing ground-state symmetry of strongly correlated materials

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          Abstract

          A linearly polarized hard X-ray photoemission system has been developed for studying the ground-state symmetry of strongly correlated materials.

          Abstract

          An angle-resolved linearly polarized hard X-ray photoemission spectroscopy (HAXPES) system has been developed to study the ground-state symmetry of strongly correlated materials. The linear polarization of the incoming X-ray beam is switched by a transmission-type phase retarder composed of two diamond (100) crystals. The best value of the degree of linear polarization was found to be −0.96, containing a vertical polarization component of 98%. A newly developed low-temperature two-axis manipulator enables easy polar and azimuthal rotations to select the detection direction of photoelectrons. The lowest temperature achieved was 9 K, offering the chance to access the ground state even for strongly correlated electron systems in cubic symmetry. A co-axial sample monitoring system with long-working-distance microscope enables the same region on the sample surface to be measured before and after rotation. Combining this sample monitoring system with a micro-focused X-ray beam by means of an ellipsoidal Kirkpatrick–Baez mirror (25 µm × 25 µm FWHM), polarized valence-band HAXPES has been performed on NiO for voltage application as resistive random access memory to demonstrate the micro-positioning technique and polarization switching.

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          Most cited references23

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          Magnitude and Origin of the Band Gap in NiO

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            Emerging memories: resistive switching mechanisms and current status.

            The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.
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              Electrical observations of filamentary conductions for the resistive memory switching in NiO films

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                Author and article information

                Journal
                J Synchrotron Radiat
                J Synchrotron Radiat
                J. Synchrotron Rad.
                Journal of Synchrotron Radiation
                International Union of Crystallography
                0909-0495
                1600-5775
                01 May 2016
                01 April 2016
                01 April 2016
                : 23
                : Pt 3 ( publisher-idID: s160300 )
                : 735-742
                Affiliations
                [a ]Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
                [b ]SPring-8/RIKEN, Sayo, Hyogo 679-5148, Japan
                [c ]Faculty of Science and Engineering, Setsunan University, Neyagawa, Osaka 572-8508, Japan
                [d ]Department of Physical Science, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
                [e ]Faculty of Science and Engineering, Konan University, Kobe 658-8501, Japan
                [f ]Department of Physics, College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-0062, Japan
                [g ]Graduate School of Science and Technology, Kansai University, Suita, Osaka 564-8680, Japan
                [h ]Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
                Author notes
                Article
                ve5047 JSYRES S1600577516003003
                10.1107/S1600577516003003
                5356621
                27140153
                dad7bd7f-96bf-48fb-9975-d280a921f523
                © Hidenori Fujiwara et al. 2016

                This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.

                History
                : 05 December 2015
                : 19 February 2016
                Categories
                Research Papers

                Radiology & Imaging
                hard x-ray photoemission,linear dichroism,strongly correlated electron systems,phase retarder,micro-focused x-rays,sample monitoring system,low-temperature double-axis manipulator

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