9
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

      , ,
      Electrochemical and Solid-State Letters
      The Electrochemical Society

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references15

          • Record: found
          • Abstract: not found
          • Article: not found

          Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Silicon surface passivation by atomic layer deposited Al2O3

                Bookmark

                Author and article information

                Journal
                ESLEF6
                Electrochemical and Solid-State Letters
                Electrochem. Solid-State Lett.
                The Electrochemical Society
                10990062
                2010
                2010
                : 13
                : 3
                : H76
                Article
                10.1149/1.3276040
                daee6636-371c-40b3-bf71-20d66bf68d22
                © 2010
                History

                Comments

                Comment on this article