Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

Leistiko, O.; Grove, A.S.; Sah, C.T.

doi:10.1109/T-ED.1965.15489

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Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

Author(s): O. Leistiko , A.S. Grove , C.T. Sah

Publication date (Print): May 1965

Journal: IEEE Transactions on Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0018-9383

Publication date Created: May 1965

Publication date (Print): May 1965

Volume: 12

Issue: 5

Pages: 248-254

Article

DOI: 10.1109/T-ED.1965.15489

SO-VID: db3273f1-a6dd-43c3-9c3a-41c752aa3bb7

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Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

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Electron Channelling Contrast Imaging (ECCI)

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