- Record: found
- Abstract: not found
- Article: not found
Plasma etching of HfO2 at elevated temperatures in chlorine-based chemistry
M. Hélot ,
T. Chevolleau ,
L. Vallier ,
O. Joubert ,
E. Blanquet ,
A. Pisch ,
P. Mangiagalli ,
T. Lill
January 2006
January 2006
Read this article at
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Most cited references20
- Record: found
- Abstract: not found
- Article: not found
High-κ gate dielectrics: Current status and materials properties considerations
G. D. Wilk, J. M. Anthony, R. M. Wallace (2001)
- Record: found
- Abstract: not found
- Article: not found
Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas
O Joubert, G. Cunge, R. L. Inglebert … (2002)
- Record: found
- Abstract: not found
- Article: not found
HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy
D Blin, J.-F. Damlencourt, D. Samour … (2002)