13
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Fingerprints of Dirac points in first-principles scanning tunneling spectra of graphene on a metal substrate

      Preprint
      ,

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Graphene physisorbed on a metal has its characteristic Dirac cones preserved in the band-structure, but the Fermi level of the system is shifted due to the interaction with the substrate. Based on density functional calculations with van der Waals corrections, we present a method to determine the position of the Dirac point with respect to the Fermi level from the measured scanning tunneling spectra (STS). It has been demonstrated that the dips in both simulated local density of states and in the observed dI/dV profiles are indeed the fingerprints of the Dirac points. The type and the level of doping can be then inferred directly from the STS data without any additional experimental technique. Test calculations of graphene on a Cu(111) substrate have shown that the predicted position of the Dirac point is in close proximity to the experimental value reported in the recent studies. Moreover, simulations for graphene on a Pt(111) surface allow us to explain the apparent contradictions in the state-of-the-art experimental works.

          Related collections

          Most cited references20

          • Record: found
          • Abstract: not found
          • Article: not found

          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

            Bookmark
            • Record: found
            • Abstract: found
            • Article: not found

            Strain-induced pseudo-magnetic fields greater than 300 tesla in graphene nanobubbles.

            Recent theoretical proposals suggest that strain can be used to engineer graphene electronic states through the creation of a pseudo-magnetic field. This effect is unique to graphene because of its massless Dirac fermion-like band structure and particular lattice symmetry (C3v). Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of highly strained nanobubbles that form when graphene is grown on a platinum (111) surface. The nanobubbles exhibit Landau levels that form in the presence of strain-induced pseudo-magnetic fields greater than 300 tesla. This demonstration of enormous pseudo-magnetic fields opens the door to both the study of charge carriers in previously inaccessible high magnetic field regimes and deliberate mechanical control over electronic structure in graphene or so-called "strain engineering."
              Bookmark
              • Record: found
              • Abstract: found
              • Article: found
              Is Open Access

              Doping graphene with metal contacts

              Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by \(\sim 0.5\) eV. At equilibrium separations, the crossover from \(p\)-type to \(n\)-type doping occurs for a metal work function of \(\sim 5.4\) eV, a value much larger than the graphene work function of 4.5 eV. The numerical results for the Fermi level shift in graphene are described very well by a simple analytical model which characterizes the metal solely in terms of its work function, greatly extending their applicability.
                Bookmark

                Author and article information

                Journal
                05 July 2011
                2012-01-25
                Article
                10.1103/PhysRevB.84.235445
                1107.0950
                dd5f54ff-eaf1-4708-8ccc-176170711fcc

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                Phys. Rev. B 84, 235445 (2011)
                cond-mat.mtrl-sci

                Comments

                Comment on this article