Resonance diffraction of THz HCN laser radiation on a semiconductor (InSb) grating is studied both experimentally and theoretically. The specular reflectivity suppression due to the resonance excitation of the THz surface plasmon-polariton is observed on a pure semiconductor grating and on semiconductor gratings covered with a thin striped layer of the residual photoresist. Presence of a thin dielectric layer on the grating surface leads to the shift and widening of the plasmon-polariton resonance. A simple analytical theory of the resonance diffraction on a shallow grating covered with a dielectric layer is presented. Its results are in a good accordance with the experimental data. Analytical expressions for the resonance shift and broadening can be useful for sensing data interpretation.