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      A review of some charge transport properties of silicon

      Author(s): , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Solid-State Electronics
      Publisher: Elsevier BV

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          Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

          Frank Stern, W. E. Howard (1967)
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            Large-signal analysis of a silicon Read diode oscillator

            D.L. Scharfetter, H.K. Gummel (1969)
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              Electrical Properties of Silicon Containing Arsenic and Boron

              J Maita, F. Morin (1954)
              Article 0 comments Cited 292 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Solid-State Electronics
                Abbreviated Title: Solid-State Electronics
                Publisher: Elsevier BV
                ISSN (Print): 00381101
                Publication date Created: February 1977
                Publication date (Print): February 1977
                Volume: 20
                Issue: 2
                Pages: 77-89
                Article
                DOI: 10.1016/0038-1101(77)90054-5
                SO-VID: e1d8772a-c057-4de5-b399-72680bb83869
                Copyright © © 1977
                License:

                http://www.elsevier.com/tdm/userlicense/1.0/

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