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      A Reliability Model for Power MOSFETs Working in Avalanche Mode Based on an Experimental Temperature Distribution Analysis

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          Lifetime prediction and design of reliability tests for high-power devices in automotive applications

          M. Ciappa, F. Carbognani, W. Fichtner (2003)
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            Reliability of thick Al wire bonds in IGBT modules for traction motor drives

            J Onuki, M Koizumi, M Suwa (2000)
            Article 0 comments Cited 7 times – based on 0 reviews     Review now
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              Optimized trench MOSFET technologies for power devices

              K. Shenai (1992)
              Article 0 comments Cited 7 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: IEEE Transactions on Power Electronics
                Abbreviated Title: IEEE Trans. Power Electron.
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0885-8993
                ISSN (Electronic): 1941-0107
                Publication date Created: June 2012
                Publication date (Print): June 2012
                Volume: 27
                Issue: 6
                Pages: 3093-3100
                Article
                DOI: 10.1109/TPEL.2011.2177279
                SO-VID: e1fa72cb-c146-4031-8ef1-7525cbb9ddea
                Copyright © © 2012
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