Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

Card, H C; Rhoderick, E H

doi:10.1088/0022-3727/4/10/319

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Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

Author(s): H C Card , E H Rhoderick

Publication date (Print): October 1971

Journal: Journal of Physics D: Applied Physics

Publisher: IOP Publishing

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Title: Journal of Physics D: Applied Physics

Abbreviated Title: J. Phys. D: Appl. Phys.

Publisher: IOP Publishing

ISSN (Print): 00223727

Publication date (Print): October 1971

Volume: 4

Issue: 10

Pages: 1589-1601

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DOI: 10.1088/0022-3727/4/10/319

SO-VID: e2405cd1-9661-4978-b21f-5be4147bc5cf

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Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

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