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      High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

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      Applied Physics Letters
      AIP Publishing

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          Intrinsic SiC/SiO2 Interface States

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            Advances in SiC MOS Technology

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              ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                October 02 2000
                October 02 2000
                : 77
                : 14
                : 2186-2188
                Article
                10.1063/1.1314293
                e28efa01-6c82-4172-a5c8-504af4b319f0
                © 2000
                History

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