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2,032
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High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
Author(s):
L. N. Liu
1
,
H. W. Choi
1
,
J. P. Xu
2
,
P. T. Lai
1
Publication date
Created:
March 20 2017
Publication date
(Print):
March 20 2017
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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44
Record
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The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
A. Goetzberger
,
E. H. Nicollian
(1967)
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An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
L.M. Terman
(1962)
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HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
David Muller
,
Glen D. Wilk
,
Yves Chabal
…
(2005)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
March 20 2017
Publication date (Print):
March 20 2017
Volume
: 110
Issue
: 12
Page
: 123506
Affiliations
[
1
]
Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong 999077, Hong Kong
[
2
]
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Article
DOI:
10.1063/1.4979101
SO-VID:
e3111118-58f5-4c16-a26f-063f88e480bc
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© 2017
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