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      High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

      1 , 1 , 2 , 1
      Applied Physics Letters
      AIP Publishing

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          The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

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            An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

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              HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                March 20 2017
                March 20 2017
                : 110
                : 12
                : 123506
                Affiliations
                [1 ]Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong 999077, Hong Kong
                [2 ]School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
                Article
                10.1063/1.4979101
                e3111118-58f5-4c16-a26f-063f88e480bc
                © 2017
                History

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