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In-situ surface technique analyses and ex-situ characterization of Si1-xGex epilayers grown on Si(001)-2 ×1 by molecular beam epitaxy
Author(s):
D. Aubel
,
M Diani
,
M Stoehr
,
J. Bischoff
,
L Kübler
,
D Bolmont
,
B Fraisse
,
R Fourcade
,
D. Muller
Publication date:
1994
Journal:
J. Phys. III France
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DOI::
10.1051/jp3:1994163
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