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      Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

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          Abstract

          Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue- and green-light-emitting diodes (LEDs) emit brilliant light although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional LEDs. Here we explain why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability. From the extremely short positron diffusion lengths (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that localizing valence states associated with atomic condensates of In-N preferentially capture holes, which have a positive charge similar to positrons. The holes form localized excitons to emit the light, although some of the excitons recombine at non-radiative centres. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.

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          Most cited references 49

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          First-principles calculations for defects and impurities: Applications to III-nitrides

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            Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

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              The Blue Laser Diode

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                Author and article information

                Journal
                Nat Mater
                Nature materials
                1476-1122
                1476-1122
                Oct 2006
                : 5
                : 10
                Affiliations
                [1 ] Institute of Applied Physics and 21st Century COE Office, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan. chichibu@alumni.engr.ucsb.edu
                Article
                nmat1726
                10.1038/nmat1726
                16951678

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