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      Observation of ultrahigh mobility surface states in a topological crystalline insulator by infrared spectroscopy

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          Abstract

          Topological crystalline insulators possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has been hindered by the challenge to probe optical and transport properties of the surface states owing to the presence of bulk carriers. Here, we report infrared reflectance measurements of a topological crystalline insulator, (001)-oriented Pb 1− x Sn x Se in zero and high magnetic fields. We demonstrate that the far-infrared conductivity is unexpectedly dominated by the surface states as a result of their unique band structure and the consequent small infrared penetration depth. Moreover, our experiments yield a surface mobility of 40,000 cm 2 V −1 s −1, which is one of the highest reported values in topological materials, suggesting the viability of surface-dominated conduction in thin topological crystalline insulator crystals. These findings pave the way for exploring many exotic transport and optical phenomena and applications predicted for topological crystalline insulators.

          Abstract

          Probing optical and transport properties of the surface states in topological crystalline insulators remains a challenge. Here, Wang et al. demonstrate that the far-infrared conductivity of Pb 1− x Sn x Se ( x = 0.23−0.25) single crystals is dominated by the surface states where carriers show a high surface mobility of 40,000 cm 2 V −1 s −1.

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          Most cited references46

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          Topological Insulators

          , (2011)
          Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A 3D topological insulator supports novel spin polarized 2D Dirac fermions on its surface. In this Colloquium article we will review the theoretical foundation for these electronic states and describe recent experiments in which their signatures have been observed. We will describe transport experiments on HgCdTe quantum wells that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. We will then discuss experiments on Bi_{1-x}Sb_x, Bi_2 Se_3, Bi_2 Te_3 and Sb_2 Te_3 that establish these materials as 3D topological insulators and directly probe the topology of their surface states. We will then describe exotic states that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions, and may provide a new venue for realizing proposals for topological quantum computation. We will close by discussing prospects for observing these exotic states, a well as other potential device applications of topological insulators.
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            Topological insulators and superconductors

            Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi\(_2\)Te\(_3\) and Bi\(_2\)Se\(_3\) crystals. We review theoretical models, materials properties and experimental results on two-dimensional and three-dimensional topological insulators, and discuss both the topological band theory and the topological field theory. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. We review the theory of topological superconductors in close analogy to the theory of topological insulators.
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              The birth of topological insulators.

              Joel Moore (2010)
              Certain insulators have exotic metallic states on their surfaces. These states are formed by topological effects that also render the electrons travelling on such surfaces insensitive to scattering by impurities. Such topological insulators may provide new routes to generating novel phases and particles, possibly finding uses in technological applications in spintronics and quantum computing.
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                Author and article information

                Contributors
                zhiqiangli@scu.edu.cn
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                28 August 2017
                28 August 2017
                2017
                : 8
                : 366
                Affiliations
                [1 ]ISNI 0000 0001 2292 2549, GRID grid.481548.4, , National High Magnetic Field Laboratory, ; Tallahassee, FL 32310 USA
                [2 ]ISNI 0000 0001 0807 1581, GRID grid.13291.38, College of Physical Science and Technology, , Sichuan University, ; Chengdu, Sichuan 610064 China
                [3 ]ISNI 0000 0001 2341 2786, GRID grid.116068.8, Department of Physics, , Massachusetts Institute of Technology, ; Cambridge, MA 02139 USA
                [4 ]Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
                [5 ]ISNI 0000 0004 0546 0241, GRID grid.19188.39, Center for Condensed Matter Sciences, , National Taiwan University, ; Taipei, 10617 Taiwan
                [6 ]ISNI 0000 0001 2287 1366, GRID grid.28665.3f, Institute of Physics, , Academia Sinica, ; Taipei, 11529 Taiwan
                [7 ]ISNI 0000 0001 2256 9319, GRID grid.11135.37, International Center for Quantum Materials, School of Physics, , Peking University, ; Beijing, 100871 China
                Article
                446
                10.1038/s41467-017-00446-2
                5573725
                28848231
                e3b015a0-4a97-404e-bddd-5f7d89e1825a
                © The Author(s) 2017

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 28 December 2016
                : 29 June 2017
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