Solar cells based on kesterite-type Cu 2 ZnSnS 4 (CZTS) thin films were fabricated using a chemical route to prepare the CZTS films, consisting in sequential deposition of Cu 2 SnS 3 (CTS) and ZnS thin films followed by annealing at 550 °C in nitrogen atmosphere. The CTS compound was prepared in a one-step process using a novel chemical procedure consisting of simultaneous precipitation of Cu 2 S and SnS 2 performed by diffusion membranes assisted CBD (chemical bath deposition) technique. Diffusion membranes were used to optimize the kinetic growth through a moderate control of release of metal ions into the work solution. As the conditions for the formation in one step of the Cu 2 SnS 3 compound have not yet been reported in literature, special emphasis was put on finding the parameters that allow growing the Cu 2 SnS 3 thin films by simultaneous precipitation of Cu 2 S and SnS 2 . For that, we propose a methodology that includes numerical solution of the equilibrium equations that were established through a study of the chemical equilibrium of the system SnCl 2 , Na 3 C 6 H 5 O 7 ·2H 2 O, CuCl 2 and Na 2 S 2 O 3 ·5H 2 O. The formation of thin films of CTS and CZTS free of secondary phases grown with a stoichiometry close to that corresponding to the Cu 2 SnS 3 and Cu 2 ZnSnS 4 phases, was verified through measurements of X-ray diffraction (XRD) and Raman spectroscopy. Solar cell with an efficiency of 4.2%, short circuit current of 16.2 mA/cm 2 and open-circuit voltage of 0.49 V was obtained.