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      Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO2

      1 , 2 , 3 , 3 , 2 , 4 , 5
      Journal of Applied Physics
      AIP Publishing

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          High-efficiency crystalline silicon solar cells: status and perspectives

          This article reviews key factors for the success of crystalline silicon photovoltaics and gives an update on promising emerging concepts for further efficiency improvement and cost reduction. With a global market share of about 90%, crystalline silicon is by far the most important photovoltaic technology today. This article reviews the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective. First, it discusses key factors responsible for the success of the classic dopant-diffused silicon homojunction solar cell. Next it analyzes two archetypal high-efficiency device architectures – the interdigitated back-contact silicon cell and the silicon heterojunction cell – both of which have demonstrated power conversion efficiencies greater than 25%. Last, it gives an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrier-selective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic–inorganic perovskite materials.
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            A quasi-static technique for MOS C-V and surface state measurements

            M. Kuhn (1970)
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              On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                January 07 2019
                January 07 2019
                : 125
                : 1
                : 015301
                Affiliations
                [1 ]Research School of Engineering, Australian National University, Canberra, Australian Capital Territory 2601, Australia
                [2 ]Nanoelectronic Materials Laboratory gGmbH (NaMLab), 01187 Dresden, Germany
                [3 ]IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
                [4 ]Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden, 01062 Dresden, Germany
                [5 ]Integrated Materials Design Centre, University of New South Wales, Sydney, New South Wales 2052, Australia
                Article
                10.1063/1.5054703
                e53bf9f9-2326-4773-9e31-225cf23129d0
                © 2019
                History

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