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      Domain wall motion governed by the spin Hall effect

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          Abstract

          Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a novel class of data, memory, and logic devices. In this letter, we propose the spin Hall effect as a radically new mechanism for CIDWM. We are able to carefully tune the net spin Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique control over CIDWM. Furthermore, we determine that the depinning efficiency is intimately related to the internal structure of the domain wall, which we control by small fields along the nanowire. This new manifestation of CIDWM offers a very attractive new degree of freedom for manipulating domain wall motion by charge currents, and sheds light on the existence of contradicting reports on CIDWM in perpendicularly magnetized materials.

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          Most cited references 15

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          Spin torque switching with the giant spin Hall effect of tantalum

          We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.
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            Magnetic domain-wall logic.

            "Spintronics," in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.
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              Spin Hall effect

               J. E. Hirsch (1999)
              It is proposed that when a charge current circulates in a paramagnetic metal a transverse spin imbalance will be generated, giving rise to a 'spin Hall voltage'. Similarly, that when a spin current circulates a transverse charge imbalance will be generated, hence a Hall voltage, in the absence of charge current and magnetic field. Based on these principles we propose an experiment to generate and detect a spin current in a paramagnetic metal.
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                Author and article information

                Journal
                11 September 2012
                Article
                10.1038/nmat3553
                1209.2320

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                Custom metadata
                cond-mat.mtrl-sci

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