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      A review on carbon nanotubes and graphene as fillers in reinforced polymer nanocomposites

      , , , ,

      Journal of Industrial and Engineering Chemistry

      Elsevier BV

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          Most cited references 211

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Two Dimensional Atomic Crystals

            We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By using micromechanical cleavage, we have prepared and studied a variety of 2D crystals, including single layers of boron nitride, graphite, several dichalcogenides and complex oxides. These atomically-thin sheets (essentially gigantic 2D molecules unprotected from the immediate environment) are stable under ambient conditions, exhibit high crystal quality and are continuous on a macroscopic scale.
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              Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

              Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.
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                Author and article information

                Journal
                Journal of Industrial and Engineering Chemistry
                Journal of Industrial and Engineering Chemistry
                Elsevier BV
                1226086X
                January 2015
                January 2015
                : 21
                :
                : 11-25
                Article
                10.1016/j.jiec.2014.03.022
                © 2015

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