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      TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

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      Annual Review of Materials Research
      Annual Reviews

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Finite strain isotherm and velocities for single-crystal and polycrystalline NaCl at high pressures and 300°K

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              Temperature dependence of the dielectric function of germanium

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                Author and article information

                Journal
                Annual Review of Materials Research
                Annu. Rev. Mater. Res.
                Annual Reviews
                1531-7331
                1545-4118
                August 2006
                August 2006
                : 36
                : 1
                : 497-554
                Article
                10.1146/annurev.matsci.36.090804.095159
                e7bf0fa2-c9ac-4418-bcbb-643bc214eeea
                © 2006
                History

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