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      Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene.

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          Abstract

          Graphene is a highly promising material for high speed, broadband, and multicolor photodetection. Because of its lack of bandgap, individually gated P- and N-regions are needed to fabricate photodetectors. Here we report a technique for making a large-area photodetector on the basis of controllable fabrication of graphene P-N junctions. Our selectively doped chemical vapor deposition (CVD) graphene photodetector showed a ∼5% modulation of conductance under global IR irradiation. By comparing devices of various geometries, we identify that both the homogeneous and the P-N junction regions contribute competitively to the photoresponse. Furthermore, we demonstrate that our two-terminal graphene photodetector can be fabricated on both transparent and flexible substrates without the need for complex fabrication processes used in electrically gated three-terminal devices. This represents the first demonstration of a fully transparent and flexible graphene-based IR photodetector that exhibits both good photoresponsivity and high bending capability. This simple approach should facilitate the development of next generation high-performance IR photodetectors.

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          Author and article information

          Journal
          Nano Lett
          Nano letters
          American Chemical Society (ACS)
          1530-6992
          1530-6984
          Jul 09 2014
          : 14
          : 7
          Affiliations
          [1 ] Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States.
          Article
          10.1021/nl500443j
          24927382
          e835287d-9b6f-4959-9073-592aee0eca87
          History

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