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      Characterization of the Ge/Bi2O3 Interfaces

      research-article
      ,
      Materials Research
      ABM, ABC, ABPol
      Ge/Bi2O3, heterojunction, X-ray, electronic switch, microwave cavity

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          Abstract

          In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2O3/C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi2O3/C interface displays negative capacitance effect, the Yb/Ge/Bi2O3/C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi2O3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject filters.

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            Graphene radio frequency receiver integrated circuit.

            Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.
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              Oxygenated CdS Buffer Layers Enabling High Open-Circuit Voltages in Earth-Abundant Cu2BaSnS4Thin-Film Solar Cells

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                Author and article information

                Contributors
                Role: ND
                Role: ND
                Journal
                mr
                Materials Research
                Mat. Res.
                ABM, ABC, ABPol (São Carlos, SP, Brazil )
                1516-1439
                1980-5373
                April 2019
                : 22
                : 3
                : e201807222
                Affiliations
                [1] Jeddah orgnameUniversity of Jeddah orgdiv1Faculty of Science orgdiv2Department of Physics Saudi Arabia
                [3] Ankara orgnameAtilim University orgdiv1Faculty of Engineering orgdiv2Group of physics Turkey
                [2] Jenin orgnameArab American University orgdiv1Department of Physics Palestine
                Article
                S1516-14392019000300209
                10.1590/1980-5373-mr-2018-0722
                e935babf-1663-4ec4-bf89-7021399326c8

                This work is licensed under a Creative Commons Attribution 4.0 International License.

                History
                : 12 November 2018
                : 19 February 2019
                Page count
                Figures: 0, Tables: 0, Equations: 0, References: 28, Pages: 0
                Product

                SciELO Brazil

                Categories
                Articles

                X-ray,Ge/Bi2O3,heterojunction,electronic switch,microwave cavity

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