Probing of electromagnetic fields on atomic scale by photoelectric
  phenomena in graphene

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Abstract

We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in 2D crystals and other atomic scale structures can be giantly enhanced by a proper combination of the spectral range and substrate material.

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Optical characterization of topological insulator surface states: Berry curvature-dependent response

Pavan Hosur (2010)

We study theoretically the optical response of the surface states of a topological insulator, especially the generation of helicity-dependent direct current by circularly polarized light. Interestingly, the dominant current, due to an interband transition, is controlled by the Berry curvature of the surface bands. This extends the connection between photocurrents and Berry curvature beyond the quasiclassical approximation where it has been shown to hold. Explicit expressions are derived for the (111) surface of the topological insulator Bi_{2}Se_{3} where we find significant helicity dependent photocurrents when the rotational symmetry of the surface is broken by an in-plane magnetic field or a strain. Moreover, the dominant current grows linearly with time until a scattering occurs, which provides a means for determining the scattering time. The dc spin generated on the surface is also dominated by a linear-in-time, Berry curvature dependent contribution.

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SiC Graphene Suitable For Quantum Hall Resistance Metrology

Sergey Kubatkin, Alexander Tzalenchuk, Vladimir I Fal'ko … (2009)

We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.