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      Excitation-dependent photoluminescence in Ge∕Si Stranski-Krastanov nanostructures

      Author(s): , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

          D. J. Eaglesham, M Cerullo (1990)
          Article 0 comments Cited 431 times – based on 0 reviews     Review now
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            Theoretical calculations of heterojunction discontinuities in the Si/Ge system

            Chris Van de Walle, Richard M. Martin (1986)
            Article 0 comments Cited 392 times – based on 0 reviews     Review now
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              Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

              R. People (1986)
              Article 0 comments Cited 208 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: October 09 2006
                Publication date (Print): October 09 2006
                Volume: 89
                Issue: 15
                Page: 153106
                Article
                DOI: 10.1063/1.2361198
                SO-VID: ea9d524b-c61d-49ce-a0a5-623b99934d30
                Copyright © © 2006
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