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      A 25 Gb/s Silicon Photonics Platform

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          Abstract

          Silicon has attracted attention as an inexpensive and scalable material system for photonic-electronic, system-on-chip development. For this, a platform with both photodetectors and modulators working at high speeds, with excellent cross-wafer uniformity, is needed. We demonstrate an optical-lithography, wafer-scale photonics platform with 25 Gb/s operation. We also demonstrate modulation with an ultra-low drive voltage of 1 Vpp at 25 Gb/s. We demonstrate attractive cross-wafer uniformity, and provide detailed information about the device geometry. Our platform is available to the community as part of a photonics shuttle service.

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          Most cited references 5

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          25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning.

          We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130 nm SOI CMOS process, with 7.5 μm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25 Gb/s modulation and an extinction ratio >5 dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19 nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7 fJ/bit. The whole device fits in a compact 400 μm2 footprint.
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            50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

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              Development of Electro-Optic Phase Modulator for 94 GHz Imaging System

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                Author and article information

                Journal
                04 March 2012
                Article
                1203.0767

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                9 figures
                physics.optics

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