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      Improved red-response in thin film a-Si:H solar cells with soft-imprinted plasmonic back reflectors

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      Applied Physics Letters

      AIP Publishing

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          Most cited references 18

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          Optical properties of metallic films for vertical-cavity optoelectronic devices.

          We present models for the optical functions of 11 metals used as mirrors and contacts in optoelectronic and optical devices: noble metals (Ag, Au, Cu), aluminum, beryllium, and transition metals (Cr, Ni, Pd, Pt, Ti, W). We used two simple phenomenological models, the Lorentz-Drude (LD) and the Brendel-Bormann (BB), to interpret both the free-electron and the interband parts of the dielectric response of metals in a wide spectral range from 0.1 to 6 eV. Our results show that the BB model was needed to describe appropriately the interband absorption in noble metals, while for Al, Be, and the transition metals both models exhibit good agreement with the experimental data. A comparison with measurements on surface normal structures confirmed that the reflectance and the phase change on reflection from semiconductor-metal interfaces (including the case of metallic multilayers) can be accurately described by use of the proposed models for the optical functions of metallic films and the matrix method for multilayer calculations.
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            Plasmonic nanostructure design for efficient light coupling into solar cells.

            We demonstrate that subwavelength scatterers can couple sunlight into guided modes in thin film Si and GaAs plasmonic solar cells whose back interface is coated with a corrugated metal film. Using numerical simulations, we find that incoupling of sunlight is remarkably insensitive to incident angle, and that the spectral features of the coupling efficiency originate from several different resonant phenomena. The incoupling cross section can be spectrally tuned and enhanced through modification of the scatterer shape, semiconductor film thickness, and materials choice. We demonstrate that, for example, a single 100 nm wide groove under a 200 nm Si thin film can enhance absorption by a factor of 2.5 over a 10 microm area for the portion of the solar spectrum near the Si band gap. These findings show promise for the design of ultrathin solar cells that exhibit enhanced absorption.
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              TCO and light trapping in silicon thin film solar cells

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                November 02 2009
                November 02 2009
                : 95
                : 18
                : 183503
                Article
                10.1063/1.3256187
                © 2009
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