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      Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures

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      Journal of Applied Physics

      AIP Publishing

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          Defects in epitaxial multilayers

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            Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

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              A laser ablation method for the synthesis of crystalline semiconductor nanowires

              A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                September 14 2014
                September 14 2014
                : 116
                : 10
                : 104306
                Affiliations
                [1 ]L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, 20125 Milan, Italy
                Article
                10.1063/1.4895486
                © 2014
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