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Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures

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Journal of Applied Physics

AIP Publishing

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      Defects in epitaxial multilayers

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        Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

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          A laser ablation method for the synthesis of crystalline semiconductor nanowires

          A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
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            Author and article information

            Affiliations
            [1 ]L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, 20125 Milan, Italy
            Journal
            Journal of Applied Physics
            Journal of Applied Physics
            AIP Publishing
            0021-8979
            1089-7550
            September 14 2014
            September 14 2014
            : 116
            : 10
            : 104306
            10.1063/1.4895486
            © 2014
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