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      Effect of magnetic fullerene on magnetization reversal created at the Fe/C 60 interface

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          Abstract

          Probing the hybridized magnetic interface between organic semiconductor (OSC) and ferromagnetic (FM) layers has drawn significant attention in recent years because of their potential in spintronic applications. Recent studies demonstrate various aspects of organic spintronics such as magnetoresistance, induced interface moment etc. However, not much work has been performed to investigate the implications of such OSC/FM interfaces on the magnetization reversal and domain structure which are the utmost requirements for any applications. Here, we show that non-magnetic Fullerene can obtain non-negligible magnetic moment at the interface of Fe(15 nm)/C 60(40 nm) bilayer. This leads to substantial effect on both the magnetic domain structure as well as the magnetization reversal when compared to a single layer of Fe(15 nm). This is corroborated by the polarized neutron reflectivity (PNR) data which indicates presence of hybridization at the interface by the reduction of magnetic moment in Fe. Afterwards, upto 1.9 nm of C 60 near the interface exhibits magnetic moment. From the PNR measurements it was found that the magnetic C 60 layer prefers to be aligned anti-parallel with the Fe layer at the remanant state. The later observation has been confirmed by domain imaging via magneto-optic Kerr microscopy.

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          Most cited references 46

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          Surface Studies of Solids by Total Reflection of X-Rays

           L. G. Parratt (1954)
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            High-mobility field-effect transistors from large-area solution-grown aligned C60 single crystals.

             Yi Cui,  Vivian Lee,  J. Chung (2012)
            Field-effect transistors based on single crystals of organic semiconductors have the highest reported charge carrier mobility among organic materials, demonstrating great potential of organic semiconductors for electronic applications. However, single-crystal devices are difficult to fabricate. One of the biggest challenges is to prepare dense arrays of single crystals over large-area substrates with controlled alignment. Here, we describe a solution processing method to grow large arrays of aligned C(60) single crystals. Our well-aligned C(60) single-crystal needles and ribbons show electron mobility as high as 11 cm(2)V(-1)s(-1) (average mobility: 5.2 ± 2.1 cm(2)V(-1)s(-1) from needles; 3.0 ± 0.87 cm(2)V(-1)s(-1) from ribbons). This observed mobility is ~8-fold higher than the maximum reported mobility for solution-grown n-channel organic materials (1.5 cm(2)V(-1)s(-1)) and is ~2-fold higher than the highest mobility of any n-channel organic material (~6 cm(2)V(-1)s(-1)). Furthermore, our deposition method is scalable to a 100 mm wafer substrate, with around 50% of the wafer surface covered by aligned crystals. Hence, our method facilitates the fabrication of large amounts of high-quality semiconductor crystals for fundamental studies, and with substantial improvement on the surface coverage of crystals, this method might be suitable for large-area applications based on single crystals of organic semiconductors.
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              Unravelling the role of the interface for spin injection into organic semiconductors

              Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.
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                Author and article information

                Contributors
                sbedanta@niser.ac.in
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                3 April 2018
                3 April 2018
                2018
                : 8
                Affiliations
                [1 ]ISNI 0000 0004 1764 227X, GRID grid.419643.d, Laboratory for Nanomagnetism and Magnetic Materials (LNMM), School of Physical Sciences, , National Institute of Science Education and Research (NISER), HBNI, ; Jatni, 752050 India
                [2 ]ISNI 0000 0001 2297 375X, GRID grid.8385.6, Jülich Centre for Neutron Science (JCNS), Heinz Maier-Leibnitz Zentrum (MLZ), , Forschungszentrum Jülich GmbH, ; Lichtenbergstr. 1, 85748 Garching, Germany
                [3 ]ISNI 0000 0004 1796 3268, GRID grid.419701.a, CSIR - National Physical Laboratory, ; Dr. K. S. Krishnan Marg, New Delhi, 110012 India
                [4 ]ISNI 0000 0004 1796 3268, GRID grid.419701.a, Academy of Scientific and Innovative Research (AcSIR), , CSIR-National Physical Laboratory, ; New Delhi, 110012 India
                [5 ]ISNI 0000 0004 1792 1607, GRID grid.418808.d, CSIR - Institute of Minerals and Materials Technology, Bhubaneswar, ; Odisha, 51013 India
                [6 ]ISNI 0000 0001 2297 375X, GRID grid.8385.6, PGI-4: Scattering Methods Forschungszentrum Jülich GmbH, ; 52425 Jülich, Germany
                Article
                23864
                10.1038/s41598-018-23864-8
                5882892
                29615794
                © The Author(s) 2018

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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