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      Andreev reflection and enhanced subgap conductance in NbN/Au/InGaAs-InP junctions

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          Abstract

          We report on the fabrication of highly transparent superconductor/normal metal/two-dimensional electron gas junctions formed by a superconducting NbN electrode, a thin (10nm) Au interlayer, and a two-dimensional electron gas in a InGaAs/InP heterostructure. High junction transparency has been achieved by exploiting of a newly developed process of Au/NbN evaporation and rapid annealing at 400C. This allowed us to observe for the first time a decrease in the differential resistance with pronounced double-dip structure within the superconducting energy gap in superconductor-2DEG proximity systems. The effect of a magnetic field perpendicular to the plane of the 2DEG on the differential resistance of the interface was studied. It has been found that the reduced subgap resistance remains in high magnetic fields. Zero-field data are analyzed within the previously established quasiclassical model for the proximity effect.

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          Transition from metallic to tunneling regimes in superconducting microconstrictions: Excess current, charge imbalance, and supercurrent conversion

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            Quantum transport in semiconductor-superconductor microjunctions

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              Observation of pair currents in superconductor-semiconductor contacts

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                Author and article information

                Journal
                29 September 2003
                2004-05-10
                Article
                10.1063/1.1783612
                cond-mat/0309682
                ebe21840-a4e3-4feb-bcd7-87d11b4c69f4
                History
                Custom metadata
                15 pages, 5 figures
                cond-mat.mes-hall

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