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      Design and characterization of GaN∕InGaN solar cells

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      Applied Physics Letters
      AIP Publishing

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          Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

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            The Blue Laser Diode

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              Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                September 24 2007
                September 24 2007
                : 91
                : 13
                : 132117
                Article
                10.1063/1.2793180
                ec85da0d-eef8-4d31-b660-973d28185e25
                © 2007
                History

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