ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
1
views
9
references
Top references
cited by
3
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
6,585
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Effect of electron‐electron scattering on mobility in GaAs
Author(s):
D. Chattopadhyay
Publication date
Created:
April 1982
Publication date
(Print):
April 1982
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
Read this article at
ScienceOpen
Publisher
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Electron Channelling Contrast Imaging (ECCI)
Most cited references
9
Record
: found
Abstract
: not found
Article
: not found
Anomalous Mobility Effects in Some Semiconductors and Insulators
Leonard R. Weisberg
(1962)
0
comments
Cited
89
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
Electron-Electron Scattering and Transport Phenomena in Nonpolar Semiconductors
Joachim Appel
(1961)
0
comments
Cited
39
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
An exact solution of the linearized Boltzmann equation with applications to the Hall mobility and Hall factor of n-GaAs
K. Fletcher
,
P Butcher
(1972)
0
comments
Cited
37
times
– based on
0
reviews
Review now
Bookmark
All references
Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
April 1982
Publication date (Print):
April 1982
Volume
: 53
Issue
: 4
Pages
: 3330-3332
Article
DOI:
10.1063/1.330995
SO-VID:
ecd7866f-13f0-41a9-9c0a-2f7343326790
Copyright ©
© 1982
History
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
6,585
Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy
Authors:
T. Tiedje
,
A. Ballestad
On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces
Authors:
N. Sibirev
,
V. Dubrovskii
,
E. Arshanskii
…
A Compact UWB Bandpass Chip Filter on a GaAs Substrate with Modified Chebyshev Structure
Authors:
Shanwen Hu
,
Yunqing Hu
,
Yiting Gao
…
See all similar
Cited by
3
Majority and minority electron and hole mobilities in heavily doped GaAs
Authors:
Jeremiah R. Lowney
,
Herbert Bennett
Majority and minority electron and hole mobilities in heavily doped gallium aluminum arsenide
Authors:
Herbert Bennett
Calculated majority‐ and minority‐carrier mobilities in heavily doped silicon and comparisons with experiment
Authors:
Herbert Bennett
,
Jeremiah R. Lowney
See all cited by
Most referenced authors
38
J. R. Meyer
M Maier
D. Chattopadhyay
See all reference authors