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      Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization

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      Journal of Applied Physics
      AIP Publishing

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          Solid Solubilities of Impurity Elements in Germanium and Silicon*

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            Theory of Growth of Spherical Precipitates from Solid Solution

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              Metal contact induced crystallization in films of amorphous silicon and germanium

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                July 2000
                July 2000
                : 88
                : 1
                : 124-132
                Article
                10.1063/1.373632
                ece13459-1e3c-44c4-974f-2dbf250d7d59
                © 2000
                History

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