19
views
0
recommends
+1 Recommend
1 collections
    3
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references29

          • Record: found
          • Abstract: not found
          • Article: not found

          Defects in epitaxial multilayers

            Bookmark
            • Record: found
            • Abstract: not found
            • Book: not found

            Transmission Electron Microscopy

              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              GaP-nucleation on exact Si (001) substrates for III/V device integration

                Bookmark

                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                June 09 2014
                June 09 2014
                : 104
                : 23
                : 232111
                Article
                10.1063/1.4883371
                ed14f58b-9e80-48e3-9617-aee422301c12
                © 2014
                History

                Comments

                Comment on this article