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Pile up of implanted phosphorus during palladium silicide formation and the characteristics of Schottky barrier diodes
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Most cited references5
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Detailed analysis of thin phosphorus-diffused layers in p-type silicon
Eileen Tannenbaum (1961)
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The redistribution of implanted dopants after metal‐silicide formation
M. Wittmer, T. Seidel (1978)
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Redistribution of As during Pd2Si formation: Ion channeling measurements
M. Wittmer, C.‐Y. Ting, K N Tu … (1982)