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UV Enhanced Oxygen Response Resistance Ratio of ZnO Prepared by Thermally Oxidized Zn on Sapphire Substrate

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      Abstract

      ZnO thin film was fabricated by thermally oxidized Zn at 600°C for 1 h. A surface containing nanostructured dumbbell and lines was observed by scanning electron microscope (SEM). The ZnO resistor device was formed after the following Ti/Au metallization. The device resistance was characterized at different oxygen pressure environment in the dark and under ultraviolet (UV) light illumination coming from the mercury lamp with a short pass filter. The resistance increases with the increase of oxygen pressure. The resistance decreases and response increases with the increase of light intensity. Models considering the barrier height variation caused by the adsorbed oxygen related species were used to explain these results. The UV light illumination technology shows an effective method to enhance the detection response for this ZnO resistor oxygen sensor.

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      ZnO nanowire UV photodetectors with high internal gain.

      ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
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        UV-activated room-temperature gas sensing mechanism of polycrystalline ZnO

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          Fabrication and characterization of ZnO nanowires based UV photodiodes

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            Author and article information

            Journal
            Journal of Nanomaterials
            Journal of Nanomaterials
            Hindawi Limited
            1687-4110
            1687-4129
            2013
            2013
            : 2013
            :
            : 1-5
            10.1155/2013/531328
            © 2013

            http://creativecommons.org/licenses/by/3.0/

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