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      Resistive Random Access Memory (ReRAM) Based on Metal Oxides

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          Resistive switching in transition metal oxides

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            Reproducible switching effect in thin oxide films for memory applications

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              Reproducible resistance switching in polycrystalline NiO films

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                Author and article information

                Journal
                Proceedings of the IEEE
                Proc. IEEE
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9219
                1558-2256
                December 2010
                December 2010
                : 98
                : 12
                : 2237-2251
                Article
                10.1109/JPROC.2010.2070830
                ef60f5d6-340e-426c-a946-dd7b4f3e9631
                © 2010
                History

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