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      Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

      , , , , , ,
      Thin Solid Films
      Elsevier BV

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          Band-gap widening in heavily Sn-dopedIn2O3

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            Plastic transistors in active-matrix displays. The handling of grey levels by these large displays paves the way for electronic paper.

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              Novel oxide amorphous semiconductors: transparent conducting amorphous oxides

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                Author and article information

                Journal
                Thin Solid Films
                Thin Solid Films
                Elsevier BV
                00406090
                August 2005
                August 2005
                : 486
                : 1-2
                : 38-41
                Article
                10.1016/j.tsf.2004.11.223
                ef6c24a5-97de-4560-bbe7-78c974a17812
                © 2005

                http://www.elsevier.com/tdm/userlicense/1.0/


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