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Effects of a predeposited boron layer during the epitaxial growth of Ge on CaF2
Author(s):
C.‐C. Cho
,
H.‐Y. Liu
,
L. K. Magel
,
J. M. Anthony
Publication date
Created:
December 13 1993
Publication date
(Print):
December 13 1993
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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Animal models of intrauterine growth restriction (IUGR)
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Surfactants in epitaxial growth.
(1989)
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Defect self-annihilation in surfactant-mediated epitaxial growth
M. Horn-von Hoegen
,
F. LeGoues
,
M Copel
…
(1991)
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The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)
J. Thornton
(1991)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
December 13 1993
Publication date (Print):
December 13 1993
Volume
: 63
Issue
: 24
Pages
: 3291-3293
Article
DOI:
10.1063/1.110178
SO-VID:
f038da83-1f20-45c0-8e7d-917f6a7690f7
Copyright ©
© 1993
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