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      Effects of a predeposited boron layer during the epitaxial growth of Ge on CaF2

      , , ,

      Applied Physics Letters

      AIP Publishing

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          Most cited references 17

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          Surfactants in epitaxial growth.

          (1989)
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            Defect self-annihilation in surfactant-mediated epitaxial growth

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              The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)

               J. Thornton (1991)
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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                December 13 1993
                December 13 1993
                : 63
                : 24
                : 3291-3293
                Article
                10.1063/1.110178
                © 1993
                Product

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