Electrostatic Tuning of the Properties of Disordered Indium Oxide Films
  near the Superconductor-Insulator Transition

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Abstract

The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large magnetoresistance peak found in the insulating regime were modified. The systematic variation of the magnetoresistance peak with charge concentration was found to be qualitatively consistent with a simulation based on a model involving granularity.

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Is Open Access

Superconductivity-Related Insulating Behavior

G Sambandamurthy, L. Engel, A. Johansson … (2003)

We present the results of an experimental study of superconducting, disordered, thin-films of amorphous Indium Oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a perpendicular magnetic field (\(B\)). We find that the high-\(B\) insulator exhibits activated transport with a characteristic temperature, \(T_I\). \(T_I\) has a maximum value (\(T_{I}^p\)) that is close to the superconducting transition temperature (\(T_c\)) at \(B\) = 0, suggesting a possible relation between the conduction mechanisms in the superconducting and insulating phases. \(T_{I}^p\) and \(T_c\) display opposite dependences on the disorder strength.