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      Single-domain multiferroic BiFeO 3 films

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          Abstract

          The strong coupling between antiferromagnetism and ferroelectricity at room temperature found in BiFeO 3 generates high expectations for the design and development of technological devices with novel functionalities. However, the multi-domain nature of the material tends to nullify the properties of interest and complicates the thorough understanding of the mechanisms that are responsible for those properties. Here we report the realization of a BiFeO 3 material in thin film form with single-domain behaviour in both its magnetism and ferroelectricity: the entire film shows its antiferromagnetic axis aligned along the crystallographic b axis and its ferroelectric polarization along the c axis. With this we are able to reveal that the canted ferromagnetic moment due to the Dzyaloshinskii–Moriya interaction is parallel to the a axis. Furthermore, by fabricating a Co/BiFeO 3 heterostructure, we demonstrate that the ferromagnetic moment of the Co film does couple directly to the canted moment of BiFeO 3.

          Abstract

          The coupling of ferroelectric and antiferromagnetic order in BiFeO 3 makes it appealing for applications however the presence of domain structure acts to undermine this potential. Here, the authors demonstrate BiFeO 3 thin films with a single domain of electrical polarization and canted antiferromagnetic order.

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          Most cited references23

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          Epitaxial BiFeO3 multiferroic thin film heterostructures.

          Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
            • Record: found
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            Above-bandgap voltages from ferroelectric photovoltaic devices.

            In conventional solid-state photovoltaics, electron-hole pairs are created by light absorption in a semiconductor and separated by the electric field spaning a micrometre-thick depletion region. The maximum voltage these devices can produce is equal to the semiconductor electronic bandgap. Here, we report the discovery of a fundamentally different mechanism for photovoltaic charge separation, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap. The separation happens at previously unobserved nanoscale steps of the electrostatic potential that naturally occur at ferroelectric domain walls in the complex oxide BiFeO(3). Electric-field control over domain structure allows the photovoltaic effect to be reversed in polarity or turned off. This new degree of control, and the high voltages produced, may find application in optoelectronic devices.
              • Record: found
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              • Article: not found

              Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature.

              Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. In this work, we demonstrate the first observation of electrical control of antiferromagnetic domain structure in a single-phase multiferroic material at room temperature. High-resolution images of both antiferromagnetic and ferroelectric domain structures of (001)-oriented multiferroic BiFeO3 films revealed a clear domain correlation, indicating a strong coupling between the two types of order. The ferroelectric structure was measured using piezo force microscopy, whereas X-ray photoemission electron microscopy as well as its temperature dependence was used to detect the antiferromagnetic configuration. Antiferromagnetic domain switching induced by ferroelectric polarization switching was observed, in agreement with theoretical predictions.

                Author and article information

                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group
                2041-1723
                01 September 2016
                2016
                : 7
                : 12712
                Affiliations
                [1 ]Max Planck Institute for Chemical Physics of Solids , Nöthnitzer Str 40, 01187 Dresden, Germany
                [2 ]Department of Materials Science and Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan
                [3 ]Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan
                [4 ]Centre for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, US
                [5 ]Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, Xi'an Jiaotong University , Xi'an, Shaanxi 710049, China
                [6 ]National Synchrotron Radiation Research Center , Hsinchu 30076, Taiwan
                [7 ]Synchrotron SOLEIL, L'Orme des Merisiers , Saint-Aubin - BP 48, 91192 GIF-sur-YVETTE, France
                [8 ]Department of Quantum Matter, ADSM, Hiroshima University , Higashi-Hiroshima 739-8530, Japan
                [9 ]Department of Electrophysics, National Chiao Tung University , Hsinchu 30010, Taiwan
                [10 ]Institute of Physics, Academia Sinica , Taipei 11529, Taiwan
                Author notes
                Author information
                http://orcid.org/0000-0001-5354-6152
                Article
                ncomms12712
                10.1038/ncomms12712
                5025802
                27581797
                f12993fd-4b6a-4796-bdb0-f2a1d0428fdd
                Copyright © 2016, The Author(s)

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 10 June 2015
                : 26 July 2016
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