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      Head-to-head domain walls in magnetic nanostructures

      Journal of Physics: Condensed Matter

      IOP Publishing

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            Magnetic domain-wall logic.

            "Spintronics," in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.
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              Single-Domain Circular Nanomagnets

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                Author and article information

                Journal
                Journal of Physics: Condensed Matter
                J. Phys.: Condens. Matter
                IOP Publishing
                0953-8984
                1361-648X
                August 06 2008
                August 06 2008
                : 20
                : 31
                : 313001
                10.1088/0953-8984/20/31/313001
                © 2008

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