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      SiLAS - SiliconLaser - Horizon 2020

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      Science Impact, Ltd.

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          Abstract

          The research aims to revolutionize the electronics industry by adding intra-chip and chip-to-chip communication at the speed of light, offering a significantly reduced energy consumption. Cubic crystal phase SiGe is known to be great for electronics. We propose to develop hexagonal crystal phase SiGe (Hex-SiGe) which features a direct bandgap and will add photonic capabilities to electronics. Direct bandgap silicon has been the holy grail of the semiconductor industry for many years, since it would allow integrating both electronic and optical functionalities on a silicon platform. Recent theoretical calculations predict that hexagonal crystal phase SiGe features a tunable direct bandgap from 1.7-4.0 micron. We have recently developed a generic approach to grow defect-free hexagonal SiGe with tunable composition. We propose to demonstrate efficient light emission from direct bandgap SiGe, followed by the development of a SiGe nanolaser. Work towards CMOS integration is included. The demonstration of a Hex-SiGe nanolaser will serve as a game-changer for transforming the electronics industry.

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          Author and article information

          Journal
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          Science Impact, Ltd.
          2398-7073
          August 20 2018
          August 20 2018
          : 2018
          : 5
          : 36-38
          Article
          10.21820/23987073.2018.5.36
          © 2018

          This work is licensed under a Creative Commons Attribution 4.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

          Earth & Environmental sciences, Medicine, Computer science, Agriculture, Engineering

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