ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
10
views
9
references
Top references
cited by
87
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
4,150
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Self‐absorption effects on the radiative lifetime in GaAs‐GaAlAs double heterostructures
Author(s):
P. Asbeck
Publication date
Created:
February 1977
Publication date
(Print):
February 1977
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
Read this article at
ScienceOpen
Publisher
Further versions
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Stress signalling in stem cells
Most cited references
9
Record
: found
Abstract
: not found
Article
: not found
Photon-Radiative Recombination of Electrons and Holes in Germanium
W. van Roosbroeck
,
W. Shockley
(1954)
0
comments
Cited
279
times
– based on
0
reviews
Review now
Record
: found
Abstract
: not found
Article
: not found
Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs
H. C. Casey
,
Frank Stern
(1976)
0
comments
Cited
214
times
– based on
0
reviews
Review now
Record
: found
Abstract
: not found
Article
: not found
Concentration dependence of the absorption coefficient forn− andp−type GaAs between 1.3 and 1.6 eV
K. Wecht
,
H. C. Casey
,
D. D. Sell
(1975)
0
comments
Cited
195
times
– based on
0
reviews
Review now
All references
Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
February 1977
Publication date (Print):
February 1977
Volume
: 48
Issue
: 2
Pages
: 820-822
Article
DOI:
10.1063/1.323633
SO-VID:
f264aa03-8603-4d70-ab8a-9d3ce04d5cbf
Copyright ©
© 1977
History
Data availability:
Comments
Comment on this article
Sign in to comment
Related Documents Log
scite_
Similar content
4,150
Effect of Nd:YAG, Ho:YAG, Er:YAG, CO2, and GaAlAs laser irradiation on surface properties of endosseous dental implants
Authors:
Kreisler M
,
M KREISLER
,
H GÖTZ
…
Influence of convection on the composition profiles of thick GaAlAs layers grown by liquid phase electroepitaxy
Authors:
Z.R Zytkiewicz
Drug-induced gingival enlargement: biofilm control and surgical therapy with gallium-aluminum-arsenide (GaAlAs) diode laser-A 2-year follow-up.
Authors:
Renata de Oliveira Guaré
,
Soraya Carvalho Costa
,
Fernando Baeder
…
See all similar
Cited by
87
Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers
Authors:
K. Bertness
,
C Henry
,
R. A. Logan
Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs
Authors:
R J Nelson
,
R. Sobers
The effect of surface recombination on current in AlxGa1−xAs heterojunctions
Authors:
F. Merritt
,
R. A. Logan
,
C Henry
See all cited by
Most referenced authors
34
W Van Lippevelde
B. F. Miller
W von der Ohe
See all reference authors