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      Self‐absorption effects on the radiative lifetime in GaAs‐GaAlAs double heterostructures

      Journal of Applied Physics
      AIP Publishing

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          Most cited references9

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          Photon-Radiative Recombination of Electrons and Holes in Germanium

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            Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs

              • Record: found
              • Abstract: not found
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              Concentration dependence of the absorption coefficient forn− andp−type GaAs between 1.3 and 1.6 eV

                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                February 1977
                February 1977
                : 48
                : 2
                : 820-822
                Article
                10.1063/1.323633
                f264aa03-8603-4d70-ab8a-9d3ce04d5cbf
                © 1977
                History

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