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      Novel Multifunctional Materials Based on Oxide Thin Films and Artificial Heteroepitaxial Multilayers

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          Abstract

          Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us to integrate these materials with semiconducting, normal conducting, dielectric or non-linear optical oxides in complex oxide heterostructures, providing the basis for novel multi-functional materials and various device applications. Here, we report on the combination of ferromagnetic, semiconducting, metallic, and dielectric materials properties in thin films and artificial heterostructures using laser molecular beam epitaxy. We discuss the fabrication and characterization of oxide-based ferromagnetic tunnel junctions, transition metal-doped semiconductors, intrinsic multiferroics, and artificial ferroelectric/ferromagetic heterostructures - the latter allow for the detailed study of strain effects, forming the basis of spin-mechanics. For characterization we use X-ray diffraction, SQUID magnetometry, magnetotransport measurements, and advanced methods of transmission electron microscopy with the goal to correlate macroscopic physical properties with the microstructure of the thin films and heterostructures.

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          Most cited references10

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          Thousandfold change in resistivity in magnetoresistive la-ca-mn-o films.

          A negative isotropic magnetoresistance effect more than three orders of magnitude larger than the typical giant magnetoresistance of some superlattice films has been observed in thin oxide films of perovskite-like La(0.67)Ca(0.33)MnOx. Epitaxial films that are grown on LaAIO(3) substrates by laser ablation and suitably heat treated exhibit magnetoresistance values as high as 127,000 percent near 77 kelvin and approximately 1300 percent near room temperature. Such a phenomenon could be useful for various magnetic and electric device applications if the observed effects of material processing are optimized. Possible mechanisms for the observed effect are discussed.
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            Magnetoelectronics

            Prinz (1998)
            An approach to electronics is emerging that is based on the up or down spin of the carriers rather than on electrons or holes as in traditional semiconductor electronics. The physical basis for the observed effects is presented, and the initial successful applications of this technology for information storage are reviewed. Additional opportunities for the exploitation of this technology, which are currently under study, are described.
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              Electronic Conduction of Magnetite (Fe3O4) and its Transition Point at Low Temperatures

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                Author and article information

                Journal
                2010-01-25
                2010-07-22
                Article
                10.1002/pssa.201026403
                1001.4447
                f370ecd4-5361-4e1f-a514-57c6811d0ba3

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                DFG priority program 1157
                Phys. Status Solidi A 208, 232-251 (2011)
                21 pages, 21 figures (2 figures added, typos corrected)
                cond-mat.mtrl-sci cond-mat.str-el

                Condensed matter
                Condensed matter

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